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Product Detailed Parameters
- Description：RF MOSFET LDMOS
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：-
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Configuration：-
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Overview
The PTVA042502FC-V1-R250 is an RF power field-effect transistor manufactured by MACOM Technology Solutions. It is a two-element ultra-high-frequency band device designed for robust performance in demanding applications. The component operates within the 470 MHz to 806 MHz frequency range, making it suitable for specific communication bands. It features a drain-source breakdown voltage of 105 V and utilizes silicon technology. The device is packaged in surface-mount format with the suffix R250 indicating reel packaging configuration.
Feature Summary
- Designed as a two-element ultra-high-frequency RF power transistor
- Optimized for operation in the 470 MHz to 806 MHz frequency band
- Constructed using silicon technology for high reliability
- Features a 105 V drain-source breakdown voltage rating
Applications
- Power amplifier applications in the 470 MHz to 806 MHz frequency band
- Ultra-high-frequency RF signal generation
- Telecommunications infrastructure equipment
Procurement Notes
Verify the exact part number PTVA042502FC-V1-R250 against official MACOM documentation to confirm specifications. Ensure compatibility with the intended 470-806 MHz application environment. Check for any specific handling requirements associated with RF MOSFET components during installation.
Selection Notes
Select this component when designing amplifiers for the 470 MHz to 806 MHz band requiring high power output. Consider the 105 V breakdown voltage for circuit design margins. Evaluate the two-element architecture for gain and linearity requirements in ultra-high-frequency systems.
Part Context
This part belongs to the PTVA series of LDMOS FETs from MACOM. These devices are engineered for power amplifier applications. The FC variant indicates specific package or pinout configurations within the series. The R250 suffix denotes tape and reel packaging for automated assembly processes.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives or cross-reference options.
