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The PTVA047002EV-V1-R250 is an RF MOSFET manufactured by MACOM Technology Solutions. It utilizes Silicon technology and features an N-Channel configuration. The device has a Drain-Source Breakdown Voltage (Vds) of 105 V and a Drain-Source Resistance (Rds On) of 100 mOhms. It is packaged in a Tape & Reel (TR) format for automated assembly processes.
Verify the complete part number including suffixes to ensure correct package type and moisture protection specifications. Confirm that the supplier provides authorized distribution channels to guarantee component authenticity. Check datasheet revisions for any updates to electrical characteristics or recommended operating conditions before finalizing procurement decisions.
Select this component when an N-Channel RF MOSFET with 105 V breakdown voltage and low on-resistance is required. Ensure the application environment supports Silicon-based devices. Verify that the Tape & Reel packaging aligns with existing surface-mount assembly equipment capabilities and handling procedures.
This part belongs to the PTVA series of RF FETs and MOSFETs from MACOM Technology Solutions. It shares family characteristics such as N-Channel polarity and Silicon technology with related models like PTVA127002EV-V1-R250, though specific electrical parameters vary between individual part numbers within the series.
PTVA127002EV-V1-R250 is a related model in the same series with similar N-Channel Silicon technology but different electrical ratings.