PTVA084007NF-V1-R5

Overview

The PTVA084007NF-V1-R5 is an RF MOSFET LDMOS device manufactured by MACOM Technology Solutions. It operates within a frequency range of 755 MHz to 805 MHz. The component provides a gain of 23.6 dB and delivers an output power of 370 W. It is designed for high-temperature environments with a maximum operating temperature of +225 C. The device utilizes a 4HBSOF package configuration.

Feature Summary

• High-power RF MOSFET LDMOS construction
• Optimized for 755–805 MHz frequency bands
• Capable of 370 W output power delivery

Applications

• RF power amplification in telecommunications infrastructure
• Industrial radio frequency applications
• Defense communication systems requiring high thermal stability

Procurement Notes

Verify the specific ordering suffix V1-R5 against the manufacturer's current datasheet to ensure compatibility with required packaging and tape specifications. Confirm that the 4HBSOF package dimensions match the intended PCB layout constraints. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high output power at frequencies between 755 MHz and 805 MHz. Ensure the system can accommodate the 48V operational voltage and manage heat dissipation effectively given the 370 W output capability. Verify that the application environment remains within the specified maximum operating temperature limits.

Part Context

This part belongs to MACOM's portfolio of radio, microwave, and millimeter wave semiconductor devices. It serves customers in telecommunications, industrial, defense, and data center industries. The device represents a specialized solution for high-performance analog RF applications requiring robust power handling capabilities.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.