PTVA092407NF-V1-R5

$55.85

Description：RF MOSFET LDMOS 48V 4HBSOF
Series：-

SKU:8472325722ec Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 48V 4HBSOF
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：869MHz ~ 960MHz
Gain：22.5dB
Voltage - Test：48 V
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：900 mA
Power - Output：240W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：HBSOF-4-1
Supplier Device Package：PG-HBSOF-4-1
Configuration：-

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PTVA092407NF-V1-R5

Overview

The PTVA092407NF-V1-R5 is an RF MOSFET LDMOS device manufactured by MACOM Technology Solutions. It operates within a frequency range of 869 MHz to 960 MHz, providing a gain of 22 dB and an output power of 240 W. The component features a drain-source breakdown voltage of 105 V and a maximum operating temperature of +225°C. It utilizes Silicon technology with a drain-source resistance of 160 mOhms. The device is housed in a RoHS compliant HBSOF-4-1 package.

Feature Summary

High-power RF performance optimized for wideband applications
LDMOS silicon technology construction
Surface mount packaging for automated assembly

Applications

Base station power amplification
Broadband RF signal processing
Wireless communication infrastructure

Procurement Notes

Verify the specific lot code and date code against the manufacturer's latest quality certifications before finalizing procurement orders. Ensure that the HBSOF-4-1 package handling requirements are strictly followed during storage and assembly to prevent electrostatic discharge damage or mechanical stress to the leads. Confirm compliance with current environmental regulations regarding restricted substances.

Selection Notes

Select this component when high output power at 240 W is required within the 869–960 MHz band. The 105 V breakdown voltage supports robust operation in demanding RF environments. Consider the thermal management capabilities associated with the LDMOS technology and the surface-mount form factor for integration into compact base station designs requiring high linearity and efficiency.

Part Context

This part belongs to MACOM’s portfolio of RF FETs and MOSFETs designed for wireless infrastructure. It complements other broadband amplifiers and switches in the company's lineup, targeting modern cellular network deployments. The device represents a solution for high-efficiency power conversion in radio frequency front-end modules.