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Product Detailed Parameters
- Description：RF MOSFET
- Series：*
- Mfr：MACOM Technology Solutions
- Package：Tape & Reel (TR)
- Technology：-
- Frequency：-
- Gain：-
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- Current Rating (Amps)：-
- Noise Figure：-
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- Power - Output：-
- Voltage - Rated：-
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- Qualification：-
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Overview
The PTVA102001EA-V1-R2 is a single-channel N-Channel RF LDMOS FET manufactured by MACOM Technology Solutions. Built on Silicon technology, it operates within the 960 MHz to 1.6 GHz frequency range. Key electrical specifications include a drain-source breakdown voltage of 105 V, a maximum gate-source voltage of +10 V, and a drain-source on-resistance of 340 mOhms. The device delivers an output power of 200 W with a gain of 18.5 dB. It supports a maximum operating temperature of +225 C and is housed in the H-36265-2 surface-mount package.
Feature Summary
- Utilizes Silicon LDMOS technology for robust RF performance
- Designed for high-power amplification in wideband applications
- Capable of sustaining high junction temperatures up to +225 C
Applications
- Broadband RF power amplification
- Wireless infrastructure base stations
- Military communication systems
Procurement Notes
Verify current availability status as the component lifecycle is marked NRND (Not Recommended for New Designs). Confirm specific reel packaging quantities and ensure compatibility with the H-36265-2 footprint during integration. Cross-reference datasheet revisions to account for any product change notifications issued by the manufacturer prior to procurement.
Selection Notes
Select this component when designing circuits requiring 200 W output power within the 960 MHz to 1.6 GHz band. Ensure thermal management solutions support the +225 C maximum operating temperature rating. Verify that the system impedance matches the device characteristics for optimal 18.5 dB gain performance. Consider the NRND status for long-term supply chain planning.
Part Context
This part belongs to MACOM's PTVA series of RF MOSFET transistors, specifically engineered for high-efficiency power amplification. The series utilizes advanced LDMOS processes to deliver high linearity and power density. The PTVA102001EA variant targets broadband applications requiring reliable performance across varying frequency conditions within its specified operational bandwidth.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND status, alternative sourcing or design migration may be necessary for new implementations.
