PTVA104501EH-V1-R0

Overview

The PTVA104501EH-V1-R0 is a thermally-enhanced high power RF LDMOS FET designed for power amplifier applications in the 960 to 1215 MHz frequency band. It features a 50 V drain-source voltage, 105 V breakdown voltage, and delivers up to 450 W output power with 17.5 dB gain. The device utilizes an H-33288-2 package with a bolt-down flange for low thermal resistance.

Feature Summary

• Broadband internal input and output matching
• Integrated ESD protection compliant with Human Body Model Class 2
• Excellent ruggedness capable of withstanding a 10:1 load mismatch at peak power

Applications

• Power amplifier applications in the 960 to 1215 MHz frequency band

Procurement Notes

Verify component authenticity through authorized MACOM distributors or official channels. Confirm RoHS compliance status via current datasheets. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Validate that the specific ordering code matches the required tape and reel quantity for production integration.

Selection Notes

Select this component for high-power RF amplification requiring broadband operation between 960 and 1215 MHz. Consider the H-33288-2 package for its thermal management capabilities and bolt-down mounting style. Evaluate the 105 V breakdown voltage and 50 V operating voltage against system requirements.

Part Context

This part belongs to MACOM's portfolio of RF LDMOS field-effect transistors. It is manufactured using an advanced LDMOS process to provide superior reliability and thermal performance compared to standard devices. The product line targets high-efficiency power amplifier designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.