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The PTVA104501EH-V1-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within a frequency range of 960 MHz to 1.215 GHz and delivers an output power of 450 W with a gain of 17.5 dB. The device features a drain-source breakdown voltage (Vds) of 105 V, a maximum gate-source voltage (Vgs) of +10 V, and a drain-source on-resistance (Rds On) of 100 mOhms. Designed for surface mount installation in the H-33288-2 package, it supports a maximum operating temperature of +225°C.
Verify component authenticity through authorized channels due to the NRND status. Confirm package integrity upon receipt as SMD components are sensitive to moisture and physical damage. Ensure compatibility with existing PCB layouts for the H-33288-2 footprint before finalizing procurement decisions.
Select this component for applications requiring high linearity and power density in the VHF/UHF bands. Evaluate thermal management requirements carefully given the high power dissipation. Compare against alternative packages if board space constraints differ from the standard H-33288-2 dimensions.
This part belongs to the PTVA series of RF MOSFET transistors designed for demanding radio frequency environments. It represents a silicon-based solution offering robust performance for industrial and scientific applications where reliability under high stress conditions is critical.
The product lifecycle status is listed as NRND (Not Recommended for New Designs). Engineers should evaluate potential obsolescence risks and consider alternative future-proof solutions for long-term production planning.