PTVA120251EA-V1

Overview

The PTVA120251EA-V1 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within a frequency range of 500 MHz to 1.4 GHz. The device features a drain-source breakdown voltage (Vds) of 105 V and a maximum gate-source voltage (Vgs) of +10 V. Key electrical parameters include a typical gain of 18 dB, an output power of 25 W, and a drain-source on-resistance (Rds On) of 1.4 Ohms. It utilizes Silicon technology with N-Channel polarity. The component is housed in the H-36265-2 surface-mount package and supports a maximum operating temperature of +225 C.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF applications
• Designed for operation up to 1.4 GHz with significant power output
• Features robust thermal performance supporting high junction temperatures

Applications

• RF power amplifier stages
• Broadband communication systems
• Test and measurement equipment

Procurement Notes

Verify the specific revision suffix when ordering, as variants such as -V2 exist with potentially different specifications. Confirm RoHS compliance status through official documentation prior to integration. Ensure that the H-36265-2 package footprint matches the design layout. Check current lifecycle status, as some related models may be marked as not recommended for new designs. Validate all electrical limits against the most recent datasheet provided by the manufacturer.

Selection Notes

Select this component for designs requiring wideband coverage between 500 MHz and 1.4 GHz. Consider the 105 V breakdown voltage for biasing requirements. Evaluate the 1.4 Ohm on-resistance for efficiency calculations. Compare gain figures against system noise and linearity needs. Ensure the thermal management solution can handle the specified maximum operating temperature of +225 C during continuous operation.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for broadband applications. It is distinct from other revisions like the PTVA120251EA-V1-R250 or the V2 variant. The H-36265-2 package is standard for this class of devices. It differs from GaN-based alternatives like the CG2H40045P in material composition and voltage characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Verify compatibility with existing board layouts if considering alternative RF LDMOS devices from other manufacturers.