SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTVA120251EA-V2-R250 is a single-channel N-Channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for operation within the 500 MHz to 1.4 GHz frequency range, this component delivers an output power of 25 W with a gain of 18 dB. It features a drain-source breakdown voltage (Vds) of 105 V and a maximum gate-source voltage (Vgs) of +10 V. The device utilizes Silicon technology and operates at a maximum temperature of +225°C. Packaged in the H-36265-2 surface-mount format, it is supplied in reels of 250 units.
Verify current availability status as the component is marked NRND (Not Recommended for New Designs). Confirm specific ordering suffixes and packaging requirements directly with authorized distributors. Ensure compliance with RoHS standards and handle ESD-sensitive components appropriately during storage and installation.
Select this component for applications requiring 25 W output power within the specified frequency band. Consider the H-36265-2 package constraints for PCB layout. Evaluate thermal management requirements given the high operating temperature rating. Compare against alternative models like the V1 variant if higher power output is required.
This part belongs to MACOM's portfolio of RF MOSFET transistors. It is distinct from the PTVA120251EA-V1 series, which offers different power and gain characteristics. The product falls under the broader category of RF FETs and MOSFETs intended for high-frequency electronic applications.
The PTVA120251EA-V1-R250 is a related variant offering 34 W output power and 15.8 dB gain. Verify pin compatibility and thermal requirements when substituting. No other direct substitutes are confirmed in public documentation.