PTVA120251EA-V2-R250

PTVA120251EA-V2-R250

$45.27
  • Description:RF MOSFET LDMOS 50V H-36265-2
  • Series:-

SKU:2b3fd3d1ab58 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V H-36265-2
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:18dB
  • Voltage - Test:50 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:25W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:N-Channel

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PTVA120251EA-V2-R250

Overview

The PTVA120251EA-V2-R250 is a single-channel N-Channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for operation within the 500 MHz to 1.4 GHz frequency range, this component delivers an output power of 25 W with a gain of 18 dB. It features a drain-source breakdown voltage (Vds) of 105 V and a maximum gate-source voltage (Vgs) of +10 V. The device utilizes Silicon technology and operates at a maximum temperature of +225°C. Packaged in the H-36265-2 surface-mount format, it is supplied in reels of 250 units.

Feature Summary

  • High-power RF performance utilizing LDMOS technology for robust signal amplification
  • Optimized for wideband operations across the 500 MHz to 1.4 GHz spectrum
  • Surface-mount construction designed for automated assembly processes

Applications

  • RF power amplification in communication systems
  • Broadband transmitter modules
  • Signal processing equipment requiring high linearity

Procurement Notes

Verify current availability status as the component is marked NRND (Not Recommended for New Designs). Confirm specific ordering suffixes and packaging requirements directly with authorized distributors. Ensure compliance with RoHS standards and handle ESD-sensitive components appropriately during storage and installation.

Selection Notes

Select this component for applications requiring 25 W output power within the specified frequency band. Consider the H-36265-2 package constraints for PCB layout. Evaluate thermal management requirements given the high operating temperature rating. Compare against alternative models like the V1 variant if higher power output is required.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors. It is distinct from the PTVA120251EA-V1 series, which offers different power and gain characteristics. The product falls under the broader category of RF FETs and MOSFETs intended for high-frequency electronic applications.

Replacement Considerations

The PTVA120251EA-V1-R250 is a related variant offering 34 W output power and 15.8 dB gain. Verify pin compatibility and thermal requirements when substituting. No other direct substitutes are confirmed in public documentation.

PTVA120251EA-V2-R250PTVA120251EA-V2-R250
$45.27
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