PTVA120251EAV2XWSA1

Overview

The PTVA120251EA is a thermally-enhanced high power RF LDMOS FET designed for power amplifier applications in the 500 MHz to 1400 MHz frequency band. It features a bolt-down flange package with low thermal resistance and excellent ruggedness, capable of withstanding a 10:1 load mismatch at 25 W output under CW conditions. The device provides high gain and efficiency, manufactured using Infineon's advanced LDMOS process for superior reliability.

Feature Summary

• High gain and efficiency performance across the operating frequency range
• Integrated ESD protection meeting HBM Class 2 standards
• Robust design capable of withstanding severe load mismatches

Applications

• Power amplifier modules in the 500-1400 MHz band
• DVB-T broadcast transmitters
• Broadband RF signal generation

Procurement Notes

Verify the specific ordering suffix against the official datasheet table to ensure correct packaging configuration. Confirm that the component meets RoHS compliance requirements and lead-free specifications as stated in the product description before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density and thermal management in the VHF/UHF spectrum. Ensure the application circuit utilizes the recommended reference impedance values provided in the datasheet for optimal matching at target frequencies within the specified bandwidth.

Part Context

This part belongs to Infineon's portfolio of thermally enhanced LDMOS FETs. It is specifically engineered for broadband applications where high linearity and robustness against load variations are critical. The H-36265-2 package facilitates efficient heat dissipation through direct mounting to a heatsink.

Replacement Considerations

PTVA120251EAV2R250XTMA1