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The PTVA120501EA-V1-R250 is an RF MOSFET LDMOS transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 1.2 GHz to 1.4 GHz with a gain of 17 dB. The device features a drain-source breakdown voltage (Vds) of 105 V and a test voltage of 50 V. It delivers an output power of 50 W at a test current of 50 mA. The component utilizes H-36265-2 packaging and supports base mounting.
Verify the specific suffix R250 against official MACOM documentation, as primary sources list R0 or R2 variants. Confirm package type H-36265-2 compatibility with your board design. Check RoHS compliance status and EAR99 classification for export requirements. Ensure thermal management solutions match the base-mount installation style specified for this component family.
Select this component when designing circuits requiring 50 W output power in the 1.2–1.4 GHz band. Consider the 105 V breakdown voltage for system headroom. Evaluate the H-36265-2 footprint for mechanical integration. Compare gain specifications against alternative LDMOS devices if higher amplification is required for the application.
This part belongs to the MACOM PTVA series of RF power MOSFETs. These transistors are engineered for robust performance in demanding radio frequency environments. The series typically offers high linearity and efficiency, making them suitable for infrastructure applications where reliability and consistent signal integrity are critical operational requirements.
Publicly confirmed substitute part numbers for PTVA120501EA-V1-R250 were not identified in the provided source material. Consult MACOM technical support for direct equivalents or cross-reference compatible LDMOS devices with matching frequency and power ratings.