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The PTVA123501ECV2XWSA1 is a thermally-enhanced high-power RF LDMOS FET manufactured by Infineon Technologies. Designed for power amplifier applications in the 1200 MHz to 1400 MHz frequency band, it delivers 350 W output power at 50 V drain voltage. The device features broadband internal matching, high gain of approximately 17 dB, and excellent thermal performance with low thermal resistance. It incorporates integrated ESD protection and ruggedness capable of withstanding a 10:1 load mismatch under pulsed conditions.
Verify the exact ordering code against the manufacturer's current documentation to ensure compatibility with the H-36248-2 package. Confirm that the component meets RoHS compliance standards and Pb-free requirements as specified in the datasheet. Check for any specific handling precautions related to its status as an electrostatic discharge sensitive device during procurement and storage.
Select this component for designs requiring high power output in the 1.2 GHz to 1.4 GHz range. Ensure the application supports Class AB operation with appropriate biasing for the specified drain current. Verify that the system can handle the thermal dissipation requirements given the junction temperature limits and thermal resistance specifications provided in the datasheet.
This part belongs to the PTVA123501 series of thermally-enhanced high-power RF LDMOS FETs from Infineon Technologies. It is specifically the EC variant housed in the H-36248-2 bolt-down package, distinguishing it from the FC variant which uses the H-37248-2 earless flange package. Both variants share similar electrical characteristics but differ in physical mounting configurations.
The PTVA123501FCV1XWSA1 serves as a functional equivalent within the same series, differing primarily in the H-37248-2 earless flange package instead of the H-36248-2 bolt-down package. Electrical performance remains comparable, but mechanical integration requires verification of mounting constraints.