PTVA123501FCV1XWSA1

Description：RF MOSFET LDMOS H-37248-2
Series：-

SKU:bf3d71b0c1b0 Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS H-37248-2
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：LDMOS
Frequency：1.2GHz ~ 1.4GHz
Gain：17dB
Voltage - Test：-
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：-
Power - Output：350W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：2-FlatPack, Fin Leads, Flanged
Supplier Device Package：H-37248-2
Configuration：Dual

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PTVA123501FCV1XWSA1

Overview

The PTVA123501FCV1XWSA1 is a thermally-enhanced high-power RF LDMOS FET designed for power amplifier applications in the 1200 MHz to 1400 MHz frequency band. It features a dual configuration with broadband internal input and output matching, providing high gain and efficiency. The device utilizes Infineon's advanced LDMOS process to deliver excellent thermal performance and superior reliability. Key electrical characteristics include a drain-source breakdown voltage of 105 V, an operating gate voltage of approximately 3.35 V, and a maximum junction temperature of 200 °C.

Feature Summary

Broadband internal input and output matching
High gain and efficiency
Integrated ESD protection
Low thermal resistance

Applications

Power amplifier applications in the 1200 MHz to 1400 MHz frequency band

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package type H-37248-2 matches design requirements. Check datasheet revision history for updates. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Validate ordering code suffixes against current availability status.

Selection Notes

Select this component for designs requiring high power output within the specified UHF frequency range. Consider the earless flange package for mounting compatibility. Evaluate thermal management solutions given the 0.34 °C/W thermal resistance rating. Ensure biasing circuits support the required 50 V drain supply and 150 mA quiescent current for optimal pulsed RF performance.

Part Context

This part belongs to the PTVA123501 series of thermally-enhanced high-power RF LDMOS FETs from Infineon Technologies. It is specifically the FC variant housed in the H-37248-2 earless flange package, distinct from the EC variant which uses the H-36248-2 package. Both variants share identical electrical specifications but differ in physical mounting configurations.