PTVA127002EV-V1-R0

Overview

The PTVA127002EV-V1-R0 is a thermally-enhanced high power RF LDMOS FET designed for power amplifier applications in the 1200 to 1400 MHz frequency band. It features a bolt-down flange package (H-36275-4) and delivers up to 700 W output power with a drain efficiency of 56% at 1300 MHz under pulsed conditions. The device operates at a 50 V drain voltage, provides 16 dB gain, and includes integrated ESD protection compliant with Human Body Model Class 2 standards.

Feature Summary

• Broadband input and output matching capabilities
• High gain and efficiency performance
• Integrated ESD protection
• Excellent ruggedness

Applications

• Power amplifier applications in the 1200 to 1400 MHz frequency band

Procurement Notes

Verify the exact ordering code against the manufacturer's current documentation before procurement. Confirm that the required shipping format matches the available reel options, as packaging quantities may vary between standard and bulk configurations. Ensure all handling precautions for electrostatic discharge sensitive devices are strictly followed during storage and assembly processes.

Selection Notes

Select this component when designing amplifiers requiring high power output within the 1200 to 1400 MHz range. Consider the H-36275-4 bolt-down flange package for thermal management requirements. Evaluate the 50 V operating voltage and 16 dB gain specifications against system constraints. Verify compatibility with the specified test fixture conditions for optimal performance validation.

Part Context

This part belongs to MACOM's portfolio of thermally-enhanced high power RF LDMOS FETs. It utilizes an advanced LDMOS process to provide superior reliability and excellent thermal performance. The device is specifically engineered for demanding power amplifier applications where high gain and efficiency are critical requirements.

Replacement Considerations

No public confirmed substitute part numbers are documented.