SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTVA127002EV-V1-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 1.2 GHz to 1.4 GHz frequency range, delivering a typical output power of 700 W and a gain of 16 dB. The device features an N-Channel silicon construction with a drain-source breakdown voltage (Vds) of 105 V and a maximum gate-source voltage (Vgs) of +10 V. Its on-resistance (Rds On) is specified at 100 mOhms. Designed for surface mount installation in H-36275-4 packages, it supports a maximum operating temperature of +225°C.
Verify the specific suffix against official documentation to confirm package or tape-and-reel variations. Ensure compatibility with existing PCB footprints and thermal management designs. Confirm RoHS compliance status through current datasheets. Validate supply chain authenticity via authorized channels. Check for recent product change notifications affecting specifications.
Evaluate thermal resistance requirements for high-power dissipation scenarios. Consider the 105 V breakdown voltage margin for circuit design. Assess the need for 16 dB gain in system architecture. Verify SMD mounting constraints for the H-36275-4 package. Ensure operation remains within the +225°C maximum junction temperature limits.
This component belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding industrial and scientific applications. It supports systems requiring high linearity and power density, such as plasma generators and wireless connectivity infrastructure. The device addresses the need for reliable, high-performance active components in harsh environments.
Consult official MACOM substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Ensure thermal interface materials are compatible with replacement packages. Verify that substitute devices meet the same ISM band regulatory requirements.