SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PXAC180602MD-V1-R500 is a GaN power amplifier module operating from 1700 MHz to 2000 MHz. It delivers high output power with an average output of 49 dBm and saturated power of 51 dBm at VDD = 28 V. The device features a typical gain of 18 dB and drain efficiency up to 60%. Designed for broadband applications, it maintains low adjacent channel leakage ratio (ACLR) under WCDMA drive-up conditions. The module utilizes a surface-mount package suitable for automated assembly.
Verify the specific ordering suffix matches the required configuration. Confirm that the datasheet specifications align with your system requirements before finalizing the purchase order. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor components.
Select this component when high linearity and power efficiency are critical in the 1700-2000 MHz range. Consider the thermal resistance and mounting requirements associated with the surface-mount package. Evaluate the need for integrated bias control versus external regulation based on system complexity.
This part belongs to MACOM's portfolio of high-performance RF power amplifiers designed for demanding communication environments. It represents a shift towards integrated modules that simplify design-in processes by combining the active die with necessary passive components and control logic in a single footprint.
Consult official documentation for direct substitutes. Cross-referencing pinouts and electrical characteristics is essential when considering alternative sources or updated revisions within the same product family.