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The PXAC200902FC-V1-R2 is an RF MOSFET manufactured by MACOM Technology Solutions, designed for high-frequency applications. It operates within a frequency range of 1.805 GHz to 2.17 GHz and delivers an output power of 90 W. The device utilizes Silicon technology and features a Drain-Source Breakdown Voltage (Vds) of 65 V with a Drain-Source Resistance (Rds On) of 220 mOhms. It supports a maximum operating temperature of +225 C and is available in a Tape & Reel (TR) package suitable for SMD/SMT mounting.
Verify the specific datasheet version and ordering suffixes to ensure compatibility with your design requirements. Confirm that the Tape & Reel packaging aligns with your automated assembly processes. Cross-reference the electrical parameters against your system specifications to guarantee performance under expected load conditions.
Select this component when designing systems requiring high output power at frequencies around 2 GHz. Consider the 65 V breakdown voltage and thermal limits when planning heat dissipation strategies. Ensure the SMD/SMT form factor fits your board layout constraints and manufacturing capabilities.
This part belongs to MACOM's portfolio of discrete semiconductor products, specifically focusing on RF FETs and MOSFETs. MACOM provides a broad range of RF, Microwave, Analog, and Mixed Signal technologies, serving customers with components tailored for demanding communication and radar applications.
No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM directly or engineering resources for potential alternatives if this specific model is unavailable.