PXAC201202FC-V2

Overview

The PXAC201202FC-V2 is an RF MOSFET utilizing LDMOS technology, designed for high-frequency applications. It operates with a test voltage of 28 V and a test current of 240 mA. The component supports frequencies up to 2.2 GHz, providing a gain of 17 dB. It delivers an output power of 16 W and is housed in the H-37248-4 package.

Feature Summary

• Utilizes LDMOS technology for RF performance
• Operates at 2.2 GHz frequency range
• Provides 16 W output power capability

Applications

• RF power amplification
• Wireless communication systems
• Broadband infrastructure equipment

Procurement Notes

Verify the specific suffix (e.g., -R250) against official MACOM documentation to ensure correct reel quantity and packaging configuration. Confirm that the H-37248-4 package matches the intended PCB footprint and thermal requirements before finalizing procurement orders.

Selection Notes

Select this component when a 28 V supply and 240 mA bias current are required for 2.2 GHz operations. Ensure the design accommodates the 16 W power handling and 17 dB gain characteristics within the system's thermal and impedance matching constraints.

Part Context

This part belongs to the MACOM RF FETs and MOSFETs product line. It serves as a discrete semiconductor solution for radio frequency signal processing, distinct from integrated circuits or passive components within the manufacturer's broader portfolio.

Replacement Considerations

The PXAC201202FC-V2-R250 is a documented variant with identical electrical specifications but potentially different packaging quantities. Verify package compatibility before substitution.

FAQ

What is the maximum operating frequency?

The device supports frequencies up to 2.2 GHz.

What is the output power rating?

The component provides 16 W of output power.