PXAC201602FC-V1-R0

Overview

The PXAC201602FC-V1-R0 is an RF MOSFET LDMOS device manufactured by MACOM Technology Solutions. It operates at a frequency of 2.02 GHz and delivers an output power of 22.5 W with a gain of 17.7 dB. The component utilizes a 28V supply voltage and is housed in the H-37248-4 package configuration.

Feature Summary

• Utilizes LDMOS technology for high-performance RF applications
• Designed for chassis mounting to support thermal management
• Optimized for operation at 2.02 GHz frequency

Applications

• Telecommunications infrastructure
• Industrial systems
• Defense equipment

Procurement Notes

Verify the complete part number including suffixes such as FC-V1-R0 against official MACOM documentation. Confirm that the H-37248-4 package matches your board layout requirements. Ensure the manufacturer is correctly identified as MACOM Technology Solutions, now part of Microchip, to avoid sourcing errors from generic listings.

Selection Notes

Select this component when a 22.5 W output power and 17.7 dB gain are required at 2.02 GHz. The 28V operating voltage defines the biasing circuit design. The chassis mount style dictates the mechanical integration strategy. Verify compatibility with existing RF system architectures before procurement.

Part Context

This device belongs to MACOM's portfolio of high-performance semiconductor products for telecommunications, industrial, and defense sectors. The company specializes in analog RF, microwave, and photonic solutions using technologies like GaAs and LDMOS. This specific model represents their capability in delivering reliable RF power amplification.

Replacement Considerations

Consult official MACOM or Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other LDMOS devices without checking pinout, electrical parameters, and thermal specifications against the original datasheet.