SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PXAC210552FC-V1-R0 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the frequency range of 1.805 GHz to 2.17 GHz, delivering an output power of 55 W with a gain of 17.2 dB. The device features a Vds breakdown voltage of 65 V and an Rds(on) of 380 mOhms. It utilizes Si technology and supports a maximum operating temperature of +225 C. Packaged in the H-37248-4 SMD/SMT format, it accepts a Vgs of +10 V.
Verify current availability status as supply conditions may vary. Confirm RoHS compliance details through official documentation. Ensure ordering suffixes match specific manufacturing revisions. Cross-reference datasheet parameters against application requirements before procurement.
Select this component for applications requiring high linearity and efficiency in cellular bands. Evaluate thermal management capabilities given the high operating temperature rating. Consider the asymmetric layout benefits for complex PA designs. Verify package compatibility with existing PCB footprints.
This part belongs to MACOM's portfolio of RF MOSFET transistors designed for demanding wireless infrastructure. It represents a specialized solution for modern cellular standards requiring high power density. The product line focuses on integrating advanced silicon processes for improved reliability.
No public confirmed substitute part numbers are available. Consult manufacturer engineering support for direct replacements or pin-compatible alternatives.