PXAC210552ND-V1-R5

Overview

The PXAC210552ND-V1-R5 is an RF MOSFET LDMOS device manufactured by MACOM Technology Solutions. It is housed in a PG-HB1SOF-4 package and operates with a rated voltage of 65 V. The component delivers a power output of 52.8W and provides a gain of 6.5dB. The current rating is specified at 1µA. This part is categorized under Transistors - FETs, specifically MOSFETs for RF applications.

Feature Summary

• Utilizes LDMOS technology for high-performance RF amplification
• Designed for efficient power output in radio frequency circuits
• Integrated into compact surface-mount packaging for space-constrained designs

Applications

• RF power amplification stages
• Wireless communication infrastructure
• Broadband signal processing systems

Procurement Notes

Verify the exact package designation PG-HB1SOF-4 against schematic footprints prior to ordering. Confirm that the 65V rated voltage aligns with system bias requirements. Ensure compatibility with the 52.8W output capability within thermal management constraints. Cross-reference the manufacturer part number PXAC210552ND-V1-R5 with official MACOM documentation to validate specifications before integration.

Selection Notes

Select this component when a 65V LDMOS solution is required for RF applications demanding 52.8W output. The 6.5dB gain specification should be evaluated against system noise and linearity needs. Consider the PG-HB1SOF-4 package dimensions for PCB layout planning. Verify operational parameters against specific frequency band requirements not detailed in general summaries.

Part Context

This device belongs to the RF MOSFET category within MACOM's portfolio. It serves as a semiconductor solution for analog and mixed-signal applications. The product supports high-speed connectivity and wireless technologies. It is distinct from PIN diodes or mixers offered by the same manufacturer.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.