PXAC260602FC-V1-R0

Overview

The PXAC260602FC-V1-R0 is an RF MOSFET transistor manufactured by MACOM Technology Solutions. It features a dual N-channel configuration utilizing Silicon (Si) technology. The device operates within the frequency range of 2.62 GHz to 2.69 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, a drain-source on-resistance (Rds(on)) of 800 mΩ, and a gain of 15.5 dB. The component delivers an output power of 30 W and supports a maximum operating temperature of +225°C. It is housed in the H-37248H-4 package.

Feature Summary

• Dual N-channel RF MOSFET architecture
• High thermal stability with +225°C max operating temperature
• Optimized for L-Band frequency operations

Applications

• L-Band communication systems
• RF power amplification stages
• Military and aerospace electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and variant selection. Confirm that the required RoHS compliance status aligns with project specifications. Cross-reference the H-37248H-4 package dimensions with PCB layout requirements prior to procurement. Ensure compatibility with the intended thermal management solution given the high-power output capabilities.

Selection Notes

Select this component for applications requiring robust L-Band performance with high thermal endurance. The dual N-channel design facilitates push-pull configurations for improved linearity. Evaluate the 800 mΩ on-resistance against system efficiency targets. Consider the 65 V breakdown voltage margin relative to peak operational voltages. Verify that the 30 W output power meets the specific link budget requirements of the target application.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for telecommunications, industrial, and defense sectors. These devices are engineered to provide high-performance semiconductor solutions for demanding RF environments. The product line emphasizes reliability and thermal resilience suitable for critical infrastructure and specialized electronic systems.

Replacement Considerations

Consult MACOM's official substitution guide for verified alternative part numbers. Do not assume functional equivalence with other RF FETs without reviewing specific datasheet parameters. Verify pinout compatibility and thermal characteristics before considering any cross-references.

FAQ

What is the maximum operating temperature for the PXAC260602FC-V1-R0?

The maximum operating temperature is +225°C.

Does this component support dual-channel operation?

Yes, it is a dual N-channel RF MOSFET transistor.