PXAC261202FCV1R250XTMA1

Overview

The PXAC261202FCV1R250XTMA1 is a thermally-enhanced high-power RF LDMOS FET manufactured by Infineon Technologies. It operates in the 2496 to 2690 MHz frequency band with a rated output power of 120 W at 28 V. The device features an asymmetric dual-path design for multi-standard cellular power amplifier applications, incorporating internal input and output matching networks. Packaged in the H-37248-4 ceramic open-cavity format with an earless flange, it provides low thermal resistance and integrated ESD protection compliant with Human Body Model Class 1C standards.

Feature Summary

• Asymmetric dual-path design optimized for Doherty configuration applications
• Broadband internal matching networks for simplified circuit integration
• Thermally-enhanced package with earless flange for superior heat dissipation
• Integrated electrostatic discharge (ESD) protection

Applications

• Multi-standard cellular power amplifier modules
• Doherty power amplifier configurations
• WCDMA base station transmitter stages

Procurement Notes

Verify the complete ordering code PXAC261202FCV1R250XTMA1 against official Infineon documentation to confirm the specific tape and reel shipping quantity of 250 pieces. Ensure that the H-37248-4 package variant matches your board layout requirements. Confirm RoHS compliance status through current manufacturer declarations prior to final procurement authorization.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2.5 GHz LTE/WCDMA bands. The asymmetric architecture supports peak and main path separation essential for Doherty topologies. Evaluate the thermal management strategy based on the specified junction temperature limits and thermal resistance values provided in the datasheet.

Part Context

This part belongs to Infineon's portfolio of high-power RF LDMOS transistors designed for wireless infrastructure. The PXAC series utilizes advanced silicon LDMOS processes to deliver robust performance in demanding RF environments. The specific model integrates passive components within the die structure to reduce external component count and improve overall system reliability.

Replacement Considerations

Consult official Infineon replacement guides for verified cross-reference part numbers. Do not substitute with generic RF MOSFETs as pinouts and internal matching networks are unique.