PXAC261202FCV1XWSA1

Overview

The PXAC261202FC is a thermally-enhanced high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features an asymmetric dual-path design with integrated input and output matching, housed in the H-37248-4 earless flange package. The device operates at a maximum drain-source voltage of 65 V and supports junction temperatures up to 225 °C. In Doherty configurations, it delivers 120 W CW output power at 28 V.

Feature Summary

• Asymmetric dual-path architecture optimized for Doherty power amplifier topologies
• Broadband internal matching networks covering the 2496–2690 MHz range
• Integrated electrostatic discharge (ESD) protection compliant with Human Body Model Class 1C standards
• Thermally enhanced ceramic open-cavity package with earless flange design

Applications

• Multi-standard cellular base station power amplifiers
• Doherty configuration RF power amplification
• WCDMA signal processing in cellular infrastructure

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging type. The datasheet indicates availability in both tray and tape & reel formats. Ensure compatibility with the H-37248-4 package outline specifications during board layout. Confirm RoHS compliance status through current manufacturer declarations before finalizing procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.5 GHz LTE/WCDMA bands. The asymmetric main and peak path design specifically targets Doherty amplifier architectures. Evaluate thermal management requirements based on the specified 0.48 °C/W junction-to-case resistance. Ensure gate drive voltages remain within the -6 V to +10 V operational limits.

Part Context

This part belongs to Infineon's portfolio of thermally enhanced high-power RF LDMOS transistors. It utilizes advanced silicon LDMOS process technology to achieve superior reliability and thermal performance compared to standard packages. The device is engineered to meet the stringent linearity and power density demands of modern wireless communication base stations.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Verify that any replacement maintains the H-37248-4 footprint and pinout configuration. Ensure electrical parameters such as breakdown voltage and operating frequency align with the original design requirements.