SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PXAD184218FV-V1-R2 is a dual N-channel RF LDMOS FET transistor manufactured by MACOM. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 420 W with a gain of 16 dB. The device features a Vds breakdown voltage of 65 V and an on-resistance of 30 mΩ. Designed for high-temperature environments, it supports a maximum operating temperature of +225°C. The component is housed in an H-37275G-6/2 SMD package and supplied in reel packaging.
Verify current availability directly with the manufacturer or authorized distributors, as this item may be subject to factory special order requirements. Confirm specific ordering suffixes and lead times prior to procurement. Ensure compliance with RoHS standards and validate datasheet specifications against your design parameters before finalizing purchase orders.
Select this component for applications requiring high linearity and power density in the 1.8–1.9 GHz band. The dual-channel configuration allows for balanced push-pull topologies. Evaluate thermal management solutions given the +225°C rating and 420 W output. Ensure PCB layout supports the H-37275G-6/2 package footprint and impedance matching networks for optimal RF performance.
This part belongs to MACOM’s portfolio of RF MOSFET transistors designed for demanding analog and mixed-signal applications. MACOM provides semiconductor solutions for industrial, medical, scientific, and test markets. The PXAD series focuses on high-efficiency power amplification using advanced silicon-based technologies suitable for robust operational environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for cross-reference recommendations based on specific electrical and mechanical constraints.