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The PXAE183708NB-V1-R2 is an LDMOS RF power transistor designed for high-performance applications. It operates within the frequency range of 1.805 GHz to 1.88 GHz. The device delivers a typical output power of 320 W with a gain of 16 dB under test conditions. It requires a drain voltage of 28 V and a drain current of 800 mA during operation. The component is rated for a maximum voltage of 65 V. It utilizes a surface-mount PG-HB2SOF-8-1 package, which provides thermal enhancement through an earless flange design.
Verify the specific suffix -R2 against the manufacturer's latest documentation to confirm tape-and-reel packaging specifications. Confirm that the PG-HB2SOF-8-1 footprint matches the target PCB design. Ensure compatibility with the required 28 V bias supply and thermal management infrastructure before finalizing procurement orders.
Select this component when high output power in the 1.8 GHz band is required with minimal external matching complexity. The integrated matching reduces circuit size and improves efficiency compared to discrete solutions. Consider the surface-mount form factor for automated assembly processes and compact board layouts where thermal dissipation via the exposed pad is feasible.
This part belongs to MACOM's portfolio of LDMOS power transistors engineered for demanding RF environments. The series emphasizes robust performance and ease of integration into modern communication infrastructure. These devices support the transition toward higher bandwidth requirements while maintaining energy efficiency standards critical for contemporary network hardware deployments.
No public confirmed substitute part numbers are available in the provided documentation. Verify pinout and thermal characteristics if considering alternative vendors. Consult official MACOM channels for direct cross-reference recommendations based on specific application constraints.