PXAE261908NF-V1-R5

Overview

The PXAE261908NF-V1-R5 is an RF MOSFET LDMOS device manufactured by MACOM Technology Solutions. It operates within the frequency range of 2.515 GHz to 2.675 GHz and is rated for a drain voltage of 28 V. The component delivers a power output of 240 W with a gain of 13.5 dB. It is housed in a PG-HBSOF-6-3 package and includes a -V1-R5 suffix indicating tape and reel packaging.

Feature Summary

• Utilizes LDMOS technology for high-power RF applications
• Designed for multi-standard cellular infrastructure
• Features low thermal resistance construction

Applications

• Multi-standard cellular base stations
• Broadband RF power amplification
• Wireless communication infrastructure

Procurement Notes

Verify the specific -V1-R5 ordering suffix to ensure correct tape and reel packaging configuration. Confirm that the target application supports the 28 V operating voltage and 240 W power rating. Check RoHS compliance status and lead time requirements prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2.5–2.7 GHz band. Ensure the PCB layout accommodates the PG-HBSOF-6-3 package dimensions. Verify thermal management capabilities match the 240 W dissipation requirements for reliable operation.

Part Context

This part belongs to MACOM's portfolio of RF FETs and MOSFETs designed for demanding wireless infrastructure. It complements other high-power amplifiers by providing robust performance in cellular bands, supporting modern multi-standard network deployments.

Replacement Considerations

No public confirmed substitute part numbers are available.