PXAE263708NB-V1-R0

Overview

The PXAE263708NB-V1-R0 is a high-power RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the frequency range of 2496 to 2690 MHz and is designed for wireless infrastructure applications. The device features a 28V supply voltage and delivers approximately 370W to 400W of output power at P3dB compression point.

Feature Summary

• Engineered with an advanced LDMOS process for high power density
• Includes integrated input and output matching networks
• Utilizes a thermally enhanced package design

Applications

• Wireless infrastructure base stations
• Satellite communication (SATCOM) systems
• Radar transmitters

Procurement Notes

Verify the specific suffix against official documentation, as ordering codes may indicate variations in tape-and-reel packaging or testing configurations. Confirm that the requested part number matches the exact electrical specifications required for your design, particularly regarding the operating frequency band and thermal management requirements.

Selection Notes

Select this component when designing amplifiers requiring high efficiency and linearity in the 2.5 GHz band. Ensure the application supports the necessary bias voltage and current levels. Consider the package type for PCB layout and thermal dissipation strategies to maintain optimal performance under continuous wave operation.

Part Context

This part belongs to MACOM's portfolio of high-performance semiconductor products for telecommunications and defense sectors. It represents a discrete solution for power amplification, distinct from integrated MMIC modules, offering flexibility for custom amplifier designs in industrial and data center environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.