QH8JA1TCR

$1.14

Description：MOSFET 2P-CH 20V 5A TSMT8
Series：-

SKU:305722e8662e Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 5A TSMT8
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5A
Rds On (Max) @ Id, Vgs：38mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：720pF @ 10V
Power - Max：1.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：TSMT8
Grade：-
Qualification：-

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QH8JA1TCR

Overview

The QH8JA1TCR is a dual P-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT-8 surface-mount package. It features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 5 A. The device exhibits a typical on-resistance of 38 mΩ at a gate-source voltage of -4.5 V. Key electrical parameters include a gate-source voltage rating of ±10 V, a threshold voltage of 1.2 V, and a total gate charge of 10.2 nC. Power dissipation is rated at 1.5 W, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

Dual P-channel configuration within a compact TSMT-8 surface-mount package for space-constrained designs.
Low on-resistance characteristics optimized for efficient power switching applications.
Enhanced mode operation with defined threshold and gate charge specifications for reliable drive compatibility.

Applications

DC-DC converter circuits
Motor driver interfaces
Power management modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging format. Confirm RoHS compliance status through authorized channels prior to integration. Validate that the component meets all environmental and electrical requirements for the intended operational context.

Selection Notes

Select this component when a dual P-channel solution is required with a 20 V voltage rating and moderate current handling capabilities. Evaluate the 38 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 1.5 W power limit. Ensure the driving circuit can provide the necessary negative gate-source voltage for proper enhancement mode activation.

Part Context

This part belongs to the ROHM QH8 series of dual MOSFETs designed for surface-mount assembly. The TSMT-8 package provides an eight-terminal interface suitable for compact printed circuit board layouts. The series targets general-purpose switching applications requiring integrated dual-channel functionality.