QH8JB5TCR

Overview

The QH8JB5TCR is a dual P-channel small-signal MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (V_DSS) of -40V and a continuous drain current (I_D) of -5A. The device exhibits low on-resistance, with typical values of 0.041Ω at V_GS = -4.5V and 0.033Ω at V_GS = -10V. Total gate charge (Q_G) is typically 9nC, and power dissipation (P_D) is rated at 1.5W. The component operates within a storage temperature range of -55°C to 150°C and is designed for switching applications.

Feature Summary

• Dual P-channel configuration integrated into a compact TSMT-8 surface-mount package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient switching performance in small-signal applications.
• Enhanced thermal management capabilities supporting reliable operation across extended industrial temperature ranges.

Applications

• General-purpose switching circuits requiring dual P-channel control
• Low-voltage DC-DC converter topologies
• Battery-powered equipment protection and load switching

Procurement Notes

Verify the specific ordering suffix TCR confirms tape-and-reel packaging containing 3000 units per reel. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the procurement channel provides valid traceability documentation for quality assurance purposes prior to finalizing orders.

Selection Notes

Select this component when a dual P-channel solution is required with a -40V rating and approximately 5A current capacity. The TSMT-8 package offers a compact footprint suitable for dense PCB layouts. Consider the 0.041Ω R_DS(on) at -4.5V drive for logic-level compatibility. Evaluate thermal constraints given the 1.5W power dissipation limit in enclosed environments.

Part Context

This part belongs to ROHM's QH8 series of dual MOSFETs, which integrates complementary or same-polarity transistors in single packages to reduce board space and design complexity. The QH8JB5 specifically targets small-signal switching needs, offering a balance between current handling and low on-resistance in an 8-terminal surface-mount form factor.

Replacement Considerations

Direct pin-to-pin replacements should be verified against electrical parameters such as V_DSS, I_D, and R_DS(on). Check if alternative parts offer improved R_DS(on) or lower gate charge for higher efficiency. Ensure the replacement maintains the TSMT-8 package dimensions for mechanical compatibility.