QH8JE5TCR

Overview

The QH8JE5TCR is a dual P-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT-8 surface-mount package. It features a drain-source voltage rating of -100 V and a continuous drain current of -2 A. The device exhibits a typical on-resistance (Rds(on)) of 0.22 Ω at Vgs = -4.5 V and 0.21 Ω at Vgs = -10 V. Key electrical parameters include a total gate charge of 10.2 nC, a power dissipation capacity of 1.5 W, and a threshold voltage of 2.5 V. Operating temperatures range from -55°C to +150°C, with switching times characterized by a typical fall time of 32 ns.

Feature Summary

• Dual P-channel configuration integrated into a compact TSMT-8 surface-mount package for space-constrained designs.
• Optimized low on-resistance characteristics designed to minimize conduction losses and reduce overall equipment power consumption.
• Enhanced thermal stability supporting operation across a wide temperature range suitable for industrial environments.

Applications

• Switching applications in general-purpose electronic circuits
• Motor drive circuits for cooling fans and small actuators
• Power management sections in factory automation equipment

Procurement Notes

Verify the specific ordering suffix TCR confirms the tape-and-reel packaging format required for automated assembly processes. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to finalizing procurement plans. Ensure component authenticity through verified supply chain channels.

Selection Notes

Select this component when a dual P-channel solution with 100V breakdown is required in a TSMT-8 footprint. Evaluate the 0.22 Ω Rds(on) against thermal constraints to ensure the 1.5 W power dissipation limit is not exceeded under maximum load conditions. Compare gate charge requirements against driver capabilities to optimize switching performance.

Part Context

This part belongs to ROHM's standard-grade QH8 series of power MOSFETs. The series focuses on providing complementary and dual configurations in small packages to simplify design workflows for 24V input devices. These components are intended for industrial and base station applications rather than automotive use.

Replacement Considerations

No direct public substitute part numbers are documented for this specific model. Designers should evaluate other ROHM dual P-channel MOSFETs within the same TSMT-8 package family if pin-compatible alternatives are necessary, ensuring voltage and current ratings meet or exceed original specifications.