QH8K26TR

Overview

The QH8K26TR is a dual N-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 8 A. The device exhibits a typical on-resistance (Rds(on)) of 17 mΩ at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C and utilizes the TSMT-8 surface-mount package. Key electrical parameters include a gate-source voltage rating of ±12 V, a gate charge (Qg) of 12 nC, and a power dissipation capability of 1.5 W.

Feature Summary

• Dual N-channel configuration for compact circuit integration
• Low on-resistance for efficient power switching
• High thermal stability with extended operating temperature range

Applications

• Motor driver circuits
• Power management systems
• General-purpose switching applications

Procurement Notes

Verify the specific suffix TR indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to procurement. Ensure component authenticity by purchasing from authorized distributors only.

Selection Notes

Select this component for designs requiring a dual N-channel MOSFET in a TSMT-8 package. Verify that the 40 V breakdown voltage and 8 A current rating meet system requirements. Check thermal management needs against the 1.5 W power dissipation limit.

Part Context

This part belongs to the QH8K series of dual MOSFETs from ROHM. These components are designed for space-constrained applications requiring high efficiency. The TSMT-8 package provides a compact footprint suitable for modern surface-mount assembly processes.

Replacement Considerations

The QH8KB6TCR is documented as a recommended replacement with the same TSMT-8 package. Verify pin compatibility and electrical specifications before substitution.