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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 2A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：325mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8K51TR is a dual N-channel small-signal MOSFET from ROHM Semiconductor, designed for switching applications requiring low on-resistance. It utilizes the TSMT8 package with back-side heat dissipation capabilities. Key electrical parameters include a drain-source voltage (V_DSS) of 100V and a continuous drain current (I_D) of 2A. The typical on-resistance (R_DS(on)) ranges from 0.24Ω at V_GS=10V to 0.26Ω at V_GS=4V or drive voltage. Total gate charge (Q_g) is typically 4.7nC. Power dissipation (P_D) is rated at 1.5W. The device operates within a storage temperature range of -55°C to 150°C and features a surface-mount mounting style.
Feature Summary
- Dual N-channel configuration in a compact TSMT8 package
- Low on-resistance optimized for efficient switching
- Back-side heat dissipation design for thermal management
- Suitable for motor drive applications
Applications
- Motor drives
- Switching applications
Procurement Notes
Verify the specific ordering suffix TR against the manufacturer's official datasheet to confirm tape-and-reel packaging details. Ensure compatibility with RoHS directives as indicated in public documentation. Cross-reference the part number with authorized distributors to confirm current availability status and lead times without relying on third-party inventory claims.
Selection Notes
Select this component when a dual N-channel MOSFET with 100V rating and low R_DS(on) is required for space-constrained designs. The TSMT8 package offers a balance between thermal performance and footprint size. Consider the 1.5W power dissipation limit and ensure adequate PCB thermal relief for the back-side heat dissipation feature during layout.
Part Context
The QH8K51TR belongs to ROHM's series of newly developed back-side heat dissipation packages. This series targets motor drive applications where dual MOSFETs are needed in a small form factor. The TSMT8 code identifies the specific 8-terminal surface mount package geometry used for this dual configuration.
Replacement Considerations
Publicly confirmed substitute part numbers for QH8K51TR are not available in the provided source material. Verify pinout and electrical specifications carefully if considering alternative dual N-channel MOSFETs in similar packages.
