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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：73mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：125pf @ 15V
- Power - Max：2.4W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KA1TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 4.5 A. The device exhibits a typical on-resistance (Rds(on)) of 0.086 Ω at Vgs = 4.5 V and 0.056 Ω at Vgs = 10 V. Total gate charge (Qg) is 1.5 nC, with a power dissipation (Pd) rating of 2.4 W. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration for efficient switching applications
- Low on-resistance characteristics optimized for drive voltages of 4.5 V and 10 V
- Compact TSMT-8 surface mount package design
Applications
- Switching power supplies
- Motor drive circuits
Procurement Notes
Verify the specific suffix TCR against official ROHM documentation to confirm tape-and-reel packaging details. Ensure compatibility with RoHS standards and check for any automotive usage restrictions noted in the datasheet. Confirm lead-free plating compliance before integration into final assemblies.
Selection Notes
Select this component for low-voltage switching tasks requiring compact dual-channel integration. Evaluate thermal management requirements given the 2.4 W power dissipation limit in the TSMT-8 package. Compare Rds(on) values at specific gate drive voltages against system requirements to ensure efficiency targets are met.
Part Context
This part belongs to ROHM's QH8 series of dual MOSFETs designed for space-constrained applications. The TSMT-8 package provides an 8-terminal surface-mount solution. The series focuses on balancing current handling capabilities with low on-state resistance for improved power efficiency in consumer and industrial electronics.
Replacement Considerations
Check for direct pin-compatible alternatives within the same TSMT-8 footprint. Verify that substitute parts meet or exceed the 30 V Vdss and 4.5 A Id ratings. Ensure similar Rds(on) performance at the intended gate drive voltage to maintain circuit efficiency.
