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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Rds On (Max) @ Id, Vgs：16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：640pF @ 15V
- Power - Max：1.5W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KA3TCR is a dual N-channel small signal MOSFET manufactured by ROHM Semiconductor, designed for switching applications. It features a TSMT8 surface-mount package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9.0A. Typical on-resistance (R_DS(on)) values are 0.0182 Ω at V_GS = 4.5V and 0.0123 Ω at V_GS = 10V. Total gate charge (Q_g) is typically 7.9 nC, with power dissipation rated at 2.6W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Low on-resistance design for efficient switching performance
- Compact TSMT8 surface mount package suitable for space-constrained layouts
- Lead-free plating compliant with RoHS standards
Applications
- General switching applications
- Motor drive circuits
- Power supply modules
Procurement Notes
Verify the specific ordering suffix TCR to confirm taping packaging configuration. Ensure compatibility with standard surface mount assembly processes. Confirm that the application does not require automotive-grade qualification, as this product is classified as standard grade and is not recommended for车载 equipment. Check for lead-free and halogen-free compliance requirements relevant to the target market regulations.
Selection Notes
Select the QH8KA3TCR when high current handling up to 9.0A is required in a compact dual N-channel configuration. Compare R_DS(on) specifications against thermal management constraints to ensure adequate heat dissipation within the 2.6W power rating. Consider the 30V breakdown voltage limit relative to the circuit's maximum operating voltage. Evaluate the TSMT8 package footprint against available PCB real estate compared to alternative packages.
Part Context
The QH8KA3TCR belongs to the QH8KA series of dual N-channel MOSFETs from ROHM Semiconductor. This series utilizes the TSMT8 package to provide multiple channels in a small form factor. The component is part of ROHM's portfolio of silicon-based enhancement mode transistors designed for general-purpose electronic devices.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in TSMT8 packages with similar 30V/9A ratings, such as the QH8KA1 or QH8KA2, provided their lower current or resistance specs meet the design requirements. Verify pinout compatibility and electrical parameters before substitution.
