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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：135pF @ 30V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KC5TCR is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 3 A. The device exhibits a typical on-resistance (Rds(on)) of 0.1 Ω at Vgs = 4.5 V and 0.07 Ω at Vgs = 10 V. Key electrical parameters include a total gate charge (Qg) of 1.7 nC, power dissipation (Pd) of 1.5 W, and an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration within a compact TSMT-8 surface-mount package for space-constrained designs.
- Optimized low on-resistance characteristics designed to reduce power consumption in switching applications.
- Enhanced thermal performance supporting high-temperature operation up to 150 °C.
Applications
- Motor drives for factory automation equipment
- Cooling fan motors in base station infrastructure
- Switching circuits for 24 V input devices
Procurement Notes
Verify the specific suffix 'TCR' corresponds to the taping packaging format with a reel quantity of 3000 units. Confirm RoHS compliance status through the manufacturer's official documentation before integration. Ensure the component meets the required automotive or industrial standards if applicable, noting that this product is classified as standard grade.
Selection Notes
Select the QH8KC5TCR for 24 V systems requiring dual N-channel isolation with low conduction losses. Compare Rds(on) values at specific gate drive voltages against circuit requirements. Consider the 1.5 W power dissipation limit and thermal resistance when designing heat management solutions for enclosed environments.
Part Context
This component belongs to the QH8K series of dual MOSFETs from ROHM Semiconductor. The series targets industrial and communication equipment markets, offering integrated dual channels to simplify board layout and reduce component count compared to discrete single-channel alternatives.
Replacement Considerations
The QH8KB6TCR is listed as a recommended replacement with the same TSMT-8 package. Note that the substitute offers higher current capacity (8.0 A vs 3.0 A) and lower on-resistance but differs in power dissipation ratings and gate charge specifications.
