QH8M22TCR

Overview

The QH8M22TCR is a dual N-channel and P-channel power MOSFET manufactured by ROHM Semiconductor. It features a TSMT-8 surface-mount package with dimensions of 2.8x3.0 mm (t=0.85). The device supports a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 4.5 A. Typical on-resistance (R_DS(on)) values are 0.0439 Ω at 4.5 V gate drive and 0.0346 Ω at 10 V. Total gate charge (Q_g) is typically 1.3 nC, with a maximum power dissipation (P_D) of 1.5 W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrated complementary N-channel and P-channel configuration in a single compact package
• Low total gate charge for efficient switching performance
• Surface-mount design optimized for space-constrained applications

Applications

• Motor control circuits
• DC-DC converter switches
• Power management modules

Procurement Notes

Verify the specific ordering suffix TCR confirms tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure ESD handling protocols are followed during assembly due to sensitivity characteristics.

Selection Notes

Select this component for designs requiring a matched N/P pair in a small footprint. Verify that the 40 V rating meets system voltage requirements. Check thermal management needs against the 1.5 W power dissipation limit under expected load conditions.

Part Context

This part belongs to ROHM's QH8 series of dual MOSFETs designed for low-voltage switching applications. It serves as a direct replacement for older parts like the QS8M11A in compatible designs, offering improved current handling within the same TSMT-8 package form factor.

Replacement Considerations

The QH8KB5 is listed as a similar level replacement with the same package and pinout, though it is a dual N-channel device rather than complementary. Verify functional compatibility before substitution.