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The QH8MA2TCR is a complementary medium-power MOSFET from ROHM Semiconductor, featuring an N-channel and P-channel pair within a TSMT8 surface-mount package. It supports a Drain-Source Voltage (V_DSS) of 30V with a continuous Drain Current (I_D) of 4.5A. Typical on-resistance (R_DS(on)) values are 0.04Ω at V_GS=4.5V and 0.025Ω at V_GS=10V. The total gate charge (Q_g) is 4.7nC, and power dissipation (P_D) reaches 1.5W. Designed for 4.5V drive voltage, it operates between -55°C and 150°C storage temperatures.
Verify the specific suffix 'TCR' to confirm taping packaging and 3000-unit reel quantity. Confirm RoHS compliance status as this is a standard-grade product not recommended for automotive use. Ensure the source document explicitly identifies ROHM Semiconductor as the manufacturer rather than a distributor hosting the datasheet.
Select this component for applications requiring a matched N/P pair in a small footprint with 30V rating. The 4.5A current capacity and low R_DS(on) suit moderate power motor or DC-DC converter designs. Verify that the 4.5V drive voltage requirement aligns with the system logic levels before integration.
This part belongs to the QH8MA series of complementary MOSFETs by ROHM. Variants like QH8MA3 and QH8MA4 offer different current ratings and R_DS(on) characteristics while maintaining the same TSMT8 package. The TCR suffix indicates tape-and-reel packaging for automated assembly.
Direct substitutes include QH8MA3TCR and QH8MA4TCR from the same family. These share the TSMT8 package but differ in drain current and on-resistance specifications. Verify pin compatibility and electrical limits before swapping.