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The QH8MA3TCR is a complementary dual MOSFET array manufactured by ROHM Semiconductor, featuring one N-channel and one P-channel transistor within a single TSMT8 surface-mount package. It supports a Drain-Source Voltage (V_DSS) of 30V with continuous drain currents of 7A for the N-channel and 5.5A for the P-channel at 25°C. The device exhibits low on-resistance, typically 29 mΩ at V_GS = 10V. Key electrical parameters include a maximum gate charge of 7.2 nC and a power dissipation rating of 1.5W. It operates within a junction temperature range up to 150°C and complies with RoHS3 standards.
Verify the specific ordering suffix against official ROHM documentation to ensure correct packaging and tape specifications. Confirm that the component meets the required environmental standards for the target application, noting that this standard-grade product is not recommended for automotive use. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before procurement.
Select the QH8MA3TCR when a compact solution for low-voltage (30V) complementary switching is required. Ensure the thermal management design accommodates the 1.5W power dissipation limit in the TSMT8 package. Verify that the drive voltage levels are sufficient to achieve the specified low on-resistance values for optimal efficiency in the intended circuit topology.
This component belongs to the QH8 series of small-signal and medium-power MOSFETs from ROHM Semiconductor. These devices are designed for general-purpose switching applications where space constraints and switching efficiency are critical. The TSMT8 package provides a balance between thermal performance and footprint size compared to larger discrete packages.
For direct replacement in existing designs, verify pin compatibility and electrical parameter equivalence. Consider the QH8MA4TCR as a potential alternative within the same family, ensuring its specific current ratings and on-resistance characteristics align with the original design requirements.