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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A/8A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 8A
- Rds On (Max) @ Id, Vgs：16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：640pF @ 15V
- Power - Max：1.5W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8MA4TCR is a dual N-channel and P-channel MOSFET manufactured by ROHM Semiconductor in the TSMT-8 surface-mount package. It features a drain-source voltage of ±30V, with continuous drain currents of +9.0A for the N-channel and -8.0A for the P-channel. The device offers low on-state resistance, rated at a maximum of 16.0mΩ for the N-channel and 28.6mΩ for the P-channel at VGS=10V. Total power dissipation is specified at 2.6W, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-state resistance for efficient switching performance
- Compact TSMT-8 surface mount package design
- Pb-free plating compliant with RoHS standards
- Halogen-free material composition
Applications
- Switching applications in electronic circuits
- Motor drive control systems
- Power supply modules
Procurement Notes
Verify component authenticity through official ROHM channels or authorized distributors. Confirm datasheet revision status before integration. Ensure storage conditions remain within recommended humidity and temperature limits to maintain solderability. Validate marking codes against the TCR taping specification.
Selection Notes
Select this component for designs requiring complementary N/P-channel pairs in a single footprint. Evaluate thermal resistance requirements based on ambient temperature derating curves. Verify gate threshold voltage compatibility with logic levels. Consider avalanche energy ratings for inductive load protection strategies.
Part Context
This part belongs to the QH8 series of small signal MOSFETs designed for general-purpose switching. It utilizes silicon technology optimized for low conduction losses. The TSMT-8 package provides a balance between current handling capability and board space efficiency for consumer and industrial electronics.
Replacement Considerations
Direct substitutes include other ROHM complementary MOSFETs in the TSMT-8 package such as QH8MA3TCR or QH8MC5TCR, provided voltage and current ratings meet specific circuit requirements. Cross-vendor replacements require careful verification of pinout compatibility and electrical parameter margins.
