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The QH8MC5TCR is a dual complementary power MOSFET (N-channel and P-channel) in a TSMT-8 surface-mount package. It supports a drain-source voltage of 60V with continuous drain currents of 3.0A for the N-channel and 3.5A for the P-channel. The device features low on-resistance, typically 0.1Ω at VGS=4.5V for both channels, and 0.07Ω at VGS=10V. Total gate charge is 1.7nC, and power dissipation is rated at 1.5W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix TCR confirms the taping packaging format with a quantity of 3000 units per reel. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are not included in the technical specification data provided.
Select this component for designs requiring a matched N-P pair in a small footprint. Ensure the 60V rating and 1.5W power dissipation meet thermal requirements. Note that this standard-grade product is not recommended for automotive use; verify application constraints against industry standards before integration.
This part belongs to ROHM's QH8 series of dual MOSFETs, designed to simplify circuit layouts by integrating complementary transistors. The TSMT-8 package offers a balance between current handling capability and board space efficiency, targeting industrial and communication infrastructure markets rather than consumer or automotive sectors.
The QH8KB6 is listed as a same-package replacement option for related models in the series. Verify electrical parameters such as Rds(on) and Id against the QH8MC5TCR specifications to ensure compatibility if substituting within the QH8 family.