QID1210005

Overview

The Powerex QID1210005 is a split dual silicon/silicon carbide hybrid IGBT module rated for 1200 V collector-emitter voltage and 100 A continuous collector current. It integrates two individual IGBT transistors, each paired with a reverse-connected super-fast recovery free-wheeling silicon carbide Schottky diode. The device features an isolated copper baseplate with aluminum nitride isolation to facilitate thermal management. Designed for high-frequency applications, it supports hard switching up to 30 kHz and soft switching up to 80 kHz. Key electrical parameters include a maximum junction temperature of 150°C, a collector-emitter saturation voltage of 6.5 V at 100 A, and an internal inductance of 10 nH.

Feature Summary

• Integrates discrete super-fast recovery free-wheeling silicon carbide Schottky diodes to reduce off-state switching losses.
• Features an isolated copper baseplate with aluminum nitride insulation for simplified system assembly and effective heat sinking.
• Designed with low internal inductance to support high-frequency operation in both hard and soft switching environments.

Applications

• High frequency power systems including UPS, induction heating, welders, and robotics
• Energy saving power systems such as fans, pumps, and consumer appliances
• High temperature power electronics in electric vehicle and aviation systems

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before integration. Confirm that the preliminary data aligns with final production specifications. Ensure mounting torque adheres to the specified 40 in-lb limit for M6 fasteners. Validate thermal interface material compatibility with the provided contact thermal resistance values.

Selection Notes

Select this module for designs requiring high-frequency performance above standard silicon limits. Evaluate the thermal resistance characteristics against the expected ambient conditions and cooling strategy. Consider the hybrid Si/SiC architecture for reduced switching losses compared to pure silicon alternatives. Verify gate drive requirements match the specified threshold and charge parameters.

Part Context

This component belongs to the Powerex IGBT module family designed for high-frequency power conversion. It utilizes a split dual configuration to house two independent switches within a single package. The hybrid construction combines silicon IGBT technology with silicon carbide diodes to optimize efficiency in demanding power electronic applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified source material. Consult the manufacturer directly for cross-reference information or updated product line replacements.