QIS4506001

Overview

The Powerex QIS4506001 is a single discrete insulated gate bipolar transistor (IGBT) rated for 4500V collector-emitter voltage and 60A continuous collector current. Designed specifically for high-voltage switching and pulsed power applications, it features a non-isolated molybdenum mounting plate suitable for immersion in oil or conformal coating. The device operates within a junction temperature range of -55°C to 150°C and includes low drive requirements with a typical saturation voltage of 3.0V at 25°C.

Feature Summary

• Non-isolated molybdenum mounting plate designed for direct immersion in oil or conformal coating during assembly
• Low drive requirement characteristics optimized for efficient control circuitry
• Low collector-emitter saturation voltage to minimize conduction losses
• Robust construction intended for demanding high-voltage switching environments

Applications

• High-voltage impulse generators
• Pulsed power systems
• Locomotive motor drives
• Step-up transformer drivers

Procurement Notes

Verify the specific revision status of the datasheet, as the document is marked preliminary. Confirm that the non-isolated package design aligns with your insulation requirements, particularly if oil immersion or conformal coating is part of the assembly process. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under your operating conditions.

Selection Notes

Select this component when high voltage blocking capability above 4000V is required alongside moderate continuous current handling. Consider the non-isolated base for applications where external insulation via potting or oil is planned. Evaluate the switching energy parameters against your system's inductive load constraints and available gate drive resistance to ensure safe operation within the reverse bias safe operating area limits.

Part Context

This discrete IGBT represents a high-voltage silicon die typically packaged in larger modules for traction applications. It allows engineers to utilize proven HV-IGBT technology in custom discrete configurations for specialized pulsed power equipment. The device derives its performance characteristics from designs originally intended for locomotive motor drives and similar heavy-duty industrial uses.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult manufacturer resources for equivalent high-voltage discrete IGBTs with matching voltage and current ratings if replacement is necessary.