QJD1210010

Overview

The Powerex QJD1210010 is a split dual Silicon Carbide (SiC) MOSFET module rated for 1200V and 100A. It integrates two independent SiC transistors, each paired with a reverse-connected fast recovery free-wheeling Schottky diode. The device features an isolated baseplate design utilizing aluminum nitride insulation and a copper heat sink. Key electrical parameters include a maximum junction temperature of 175°C, a typical on-resistance of 15mΩ at 25°C, and a gate-source voltage range of -5V to +25V. The module weighs approximately 270 grams and provides high power density suitable for demanding thermal environments.

Feature Summary

• Dual switch configuration with integrated fast recovery Schottky diodes
• Isolated baseplate construction using aluminum nitride insulation
• High-speed switching capability with low internal inductance
• Robust thermal management supporting operation up to 175°C

Applications

• High-frequency motor drives and robotics systems
• Uninterruptible power supplies (UPS) and induction heating
• Power electronics for electric vehicles and aviation systems

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the mounting torque for M6 screws does not exceed 40 in-lb during assembly. Ensure the isolation voltage rating of 3000 Vrms aligns with system safety requirements. Validate thermal interface material compatibility to maintain the specified contact thermal resistance values.

Selection Notes

Select this component for applications requiring high-frequency operation and superior thermal performance compared to silicon alternatives. Consider the 15mΩ on-resistance and 100A continuous current rating when sizing heatsinks. Evaluate the -5V to +25V gate drive requirements to ensure compatible driver circuitry. Account for the 270-gram weight and physical dimensions when designing mechanical enclosures.

Part Context

This module belongs to the Powerex Split Dual SiC MOSFET series, designed to replace traditional silicon IGBTs in high-efficiency power conversion systems. It utilizes advanced silicon carbide technology to achieve lower switching losses and higher operating temperatures. The split dual architecture allows for independent control of two switches within a single compact package, optimizing board space and reducing parasitic inductances.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.