QJD1210SA2

$506.56

Description：MOSFET 2N-CH 1200V 100A MODULE
Series：-

SKU:9e500c672dec Category: FET, MOSFET Arrays Brand: Powerex Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 100A MODULE
Series：-
Mfr：Powerex Inc.
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：100A
Rds On (Max) @ Id, Vgs：17mOhm @ 100A, 15V
Vgs(th) (Max) @ Id：1.6V @ 34mA
Gate Charge (Qg) (Max) @ Vgs：330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：8200pF @ 10V
Power - Max：415W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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QJD1210SA2

Overview

The Powerex QJD1210SA2 is a split dual Silicon Carbide (SiC) MOSFET module rated for 1200V drain-source voltage and 100A continuous drain current. It integrates two N-channel SiC transistors with reverse-connected fast recovery free-wheeling Schottky diodes. Key electrical parameters include a typical terminal on-resistance of 18 mΩ at 25°C, a gate threshold voltage range of 0.4V to 1.6V, and a total gate charge of 330 nC. The module features an isolated baseplate with aluminum nitride insulation and an AlSiC baseplate, providing a junction-to-case thermal resistance of 0.29°C/W for the MOSFET part.

Feature Summary

Silicon Carbide chips provide high-speed switching capabilities with low internal inductance and low capacitance.
Isolated baseplate design using aluminum nitride insulation simplifies system assembly and thermal management.
Integrated fast 75A free-wheeling Schottky diode offers low forward voltage and fast reverse recovery characteristics.
Low drive requirement and industry-leading on-resistance contribute to high power density and low switching losses.

Applications

High frequency type power systems such as UPS, high speed motor drives, induction heating, welders, and robotics.
Energy saving power systems including fans, pumps, and consumer appliances.
High temperature power systems such as power electronics in electric vehicle and aviation systems.

Procurement Notes

Verify the specific revision status of the datasheet, as the provided documentation is marked preliminary. Confirm that the mounting torque for M6 screws meets the specified 40 in-lb requirement during installation. Ensure the operating junction temperature remains within the -40°C to 150°C range to maintain device reliability and performance specifications.

Selection Notes

Select this module for applications requiring high-frequency operation and high power density. Consider the 1200V rating and 100A continuous current capability when designing circuits. Evaluate the thermal management requirements based on the 0.29°C/W junction-to-case thermal resistance. Verify compatibility with the ±15V gate drive voltage and the 330 nC total gate charge for driver selection.

Part Context

This component belongs to the Powerex Silicon Carbide MOSFET Modules family. These modules are designed for high-frequency applications and consist of two MOSFET silicon carbide transistors per unit. Each transistor includes a reverse-connected fast recovery free-wheel silicon carbide Schottky diode. The series emphasizes high power density and simplified thermal management through isolated baseplates.