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Product Detailed Parameters
- Description：SIC 1200V 10A MOD
- Series：*
- Mfr：Powerex Inc.
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The QJD1210SB1 is a dual Silicon Carbide (SiC) MOSFET module manufactured by Powerex Inc. It features a voltage rating of 1200V and a continuous current capacity of 10A per device within the array. The component utilizes MOD MOSFET technology, designed for high-frequency power conversion applications. Key electrical characteristics include a maximum drain-source voltage of 1200V and a continuous drain current of 10A. The package type is a discrete module suitable for surface mount or board-level integration in high-power density designs.
Feature Summary
- Dual configuration of Silicon Carbide MOSFETs for efficient power switching
- High voltage capability of 1200V for robust operation in demanding environments
- MOD MOSFET technology optimized for high-frequency performance
- Designed for high-current applications with 10A continuous current rating
Applications
- High-frequency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Renewable energy inverters
Procurement Notes
Verify the specific datasheet version from Powerex Inc. to confirm exact thermal resistance values and gate charge parameters required for your design. Ensure that the supplier provides official documentation confirming the RoHS compliance status and the active lifecycle status of the component. Cross-reference the pinout diagram with your PCB layout to avoid connection errors during assembly.
Selection Notes
Select this component when designing circuits requiring high efficiency at elevated frequencies where silicon MOSFETs may exhibit higher losses. The dual configuration allows for half-bridge or push-pull topologies without external matching. Consider the thermal management requirements associated with SiC devices and ensure adequate heatsinking or PCB copper area to dissipate heat effectively under full load conditions.
Part Context
The QJD1210SB1 belongs to Powerex's portfolio of Silicon Carbide power modules. These modules are part of a broader family of high-performance semiconductors aimed at replacing traditional silicon components in power electronics. The series is engineered to leverage the superior material properties of SiC, such as higher breakdown voltage and lower on-resistance, enabling more compact and efficient power systems.
Replacement Considerations
Direct replacements should be sought from Powerex's other SiC MOSFET modules with similar voltage and current ratings. Verify compatibility with existing gate drive circuits due to potential differences in threshold voltages and switching speeds between different SiC generations.
