QPD1003

Overview

The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT. It operates from 1.2 to 1.4 GHz with a 50V supply rail. Minimum operating temperature is -40 C, maximum is +85 C. Power dissipation is 370 W.

Feature Summary

• Internally matched discrete design
• GaN on SiC HEMT technology

Applications

• High power RF amplification in the 1.2-1.4 GHz range

Procurement Notes

Verify the specific package type and thermal pad configuration against the official datasheet before integration. Confirm that the 50V supply requirement aligns with your system's power delivery capabilities. Ensure proper heat sinking is designed for the 370 W power dissipation rating to maintain reliability within the specified temperature range.

Selection Notes

Select this component when high output power at 1.2-1.4 GHz is required. The internal matching simplifies circuit design compared to unmatched devices. Consider the 50V supply constraint and thermal management needs for the 370 W dissipation. Verify compatibility with existing bias networks and impedance matching requirements for the target application frequency band.

Part Context

This part belongs to Qorvo's portfolio of GaN on SiC high electron mobility transistors. These devices are engineered for robust performance in demanding RF environments. The QPD1003 specifically targets applications requiring significant power output within the L-band spectrum, leveraging advanced semiconductor materials for efficiency and durability.

Replacement Considerations

No public confirmed substitute part numbers are available.