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The QPD1009TR7 is a Gallium Nitride (GaN) field-effect transistor manufactured by Qorvo, designed for high-power RF applications up to 4 GHz. It features a single N-Channel HEMT configuration housed in a QFN-16 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 50 V and a continuous drain current of 700 mA. The device operates with a gate-source threshold voltage of -2.8 V and supports a maximum power dissipation of 17.5 W. It delivers an output power of 17 W with a gain of 24 dB and a Power Added Efficiency (PAE) of 72% at 28-50 V supply voltages. The component functions within a temperature range of -40°C to +85°C.
Verify the specific suffix TR7 against official Qorvo documentation to confirm reel packaging specifications and moisture sensitivity level requirements. Ensure compatibility with standard SMD/SMT assembly processes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when designing circuits requiring high linearity and efficiency in the sub-4 GHz spectrum. Consider the 50 V breakdown rating and 17.5 W thermal dissipation limits during layout. Verify that the driving circuitry can provide the necessary negative gate bias relative to the -2.8 V threshold voltage for proper switching or amplification modes.
The QPD1009 series represents Qorvo's discrete GaN FET offerings for general-purpose high-power amplification. This specific model targets applications needing robust performance across wide bandwidths without complex tuning networks. It serves as a building block for modern wireless infrastructure where size and efficiency are critical constraints.
QPD1014ATR7 is documented as a redesign variant within the same family. Verify pinout compatibility and parameter shifts before substitution.