QPD1009TR7

QPD1009TR7

$24.67
  • Description:DC-4 GHZ, 15W, 50V GAN RF TR
  • Series:-

SKU:62f639916d60 Category: Brand:

  
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Product Detailed Parameters

  • Description:DC-4 GHZ, 15W, 50V GAN RF TR
  • Series:-
  • Mfr:Qorvo
  • Package:Tape & Reel (TR)
  • Technology:HEMT
  • Frequency:4GHz
  • Gain:24dB
  • Voltage - Test:-
  • Current Rating (Amps):1.6A
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:15W
  • Voltage - Rated:50 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:16-VFQFN Exposed Pad
  • Supplier Device Package:16-QFN (3x3)
  • Configuration:N-Channel

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QPD1009TR7

Overview

The QPD1009TR7 is a Gallium Nitride (GaN) field-effect transistor manufactured by Qorvo, designed for high-power RF applications up to 4 GHz. It features a single N-Channel HEMT configuration housed in a QFN-16 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 50 V and a continuous drain current of 700 mA. The device operates with a gate-source threshold voltage of -2.8 V and supports a maximum power dissipation of 17.5 W. It delivers an output power of 17 W with a gain of 24 dB and a Power Added Efficiency (PAE) of 72% at 28-50 V supply voltages. The component functions within a temperature range of -40°C to +85°C.

Feature Summary

  • Utilizes GaN on Silicon Carbide technology for high efficiency and power density
  • Optimized for broadband operation from DC to 4 GHz
  • Integrated thermal management via QFN-16 package design

Applications

  • Base station power amplification
  • Broadband RF transmitter modules
  • Military communication systems

Procurement Notes

Verify the specific suffix TR7 against official Qorvo documentation to confirm reel packaging specifications and moisture sensitivity level requirements. Ensure compatibility with standard SMD/SMT assembly processes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the sub-4 GHz spectrum. Consider the 50 V breakdown rating and 17.5 W thermal dissipation limits during layout. Verify that the driving circuitry can provide the necessary negative gate bias relative to the -2.8 V threshold voltage for proper switching or amplification modes.

Part Context

The QPD1009 series represents Qorvo's discrete GaN FET offerings for general-purpose high-power amplification. This specific model targets applications needing robust performance across wide bandwidths without complex tuning networks. It serves as a building block for modern wireless infrastructure where size and efficiency are critical constraints.

Replacement Considerations

QPD1014ATR7 is documented as a redesign variant within the same family. Verify pinout compatibility and parameter shifts before substitution.

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