QPD1015

Overview

The QPD1015 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by Qorvo, designed for high-power radio frequency applications. It operates within a frequency range of DC to 2.7 GHz and delivers an output power of 150 W at the P3dB compression point. The device is optimized for operation at a drain voltage of 65 V, providing a typical linear gain of 21.8 dB and a Power Added Efficiency (PAE) of 64.8% at 1.8 GHz. It features a low quiescent current of 240 mA and utilizes a surface-mount DFN package measuring 7.2 x 6.6 mm.

Feature Summary

• High power density with 150 W output capability in a compact footprint
• Broadband performance spanning from DC up to 2.7 GHz
• Industry-standard 7.2 x 6.6 mm encapsulated DFN package design

Applications

• Military radar systems requiring high reliability and power
• Electronic warfare (EW) platforms
• Satellite communication ground stations

Part Context

The QPD1015 belongs to Qorvo's QPD series of GaN on SiC RF transistors. This family is engineered for mission-critical defense and aerospace environments, offering significant Size, Weight, and Power (SWaP) advantages over traditional semiconductor technologies. The component represents a single-stage power amplifier solution suitable for demanding signal processing tasks.

Replacement Considerations

Direct replacements are not explicitly documented in public sources. Designers should evaluate other members of the QPD series, such as the QPD1013 or QPD1016, based on specific power and frequency requirements. Verification of pinout compatibility and thermal characteristics is essential before substitution.