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The QPD1022SR is a Gallium Nitride (GaN) radio frequency field-effect transistor manufactured by Qorvo. Designed for high-power RF applications, this device operates from DC to 12 GHz. It features a 32V drain-source breakdown voltage and delivers 10W of output power. The component utilizes GaN-on-SiC technology and is housed in a 16-lead QFN package measuring 3x3 mm. Key electrical specifications include a continuous drain current of 610 mA and a power dissipation rating of 17.5 W. The unit supports surface-mount installation and functions within a temperature range of -40°C to +85°C.
Verify the specific suffix 'SR' against the manufacturer's official documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with the QPD1022EVB01 development kit if evaluation is required. Confirm that the 16-lead QFN package dimensions align with the target PCB layout constraints before finalizing procurement orders.
Select this component when designing circuits requiring high linearity and efficiency at frequencies up to 12 GHz. The 32V bias requirement must be accommodated by the power supply design. Consider the thermal management capabilities of the 17.5 W dissipation rating during the system architecture phase to ensure reliable operation under maximum load conditions.
This part belongs to the QPD1025 series of GaN RF transistors. It shares the same technological foundation as other devices in the family but is optimized for specific power and frequency targets. The series represents Qorvo's capability in providing robust solutions for infrastructure markets where reliability and performance are critical requirements.
Publicly confirmed substitute part numbers are not available in the provided source material.